Enhanced GaN-based high-electron-mobility transistor and preparation method thereof

The invention discloses an enhanced GaN-based high-electron-mobility transistor and a preparation method thereof. The preparation method of the enhanced GaN-based high-electron-mobility transistor comprises the following steps: providing a substrate, the upper surface of which is provided with a stack structure, which comprises a channel layer and a barrier layer; forming a source electrode, a drain electrode and a two-dimensional electron gas consumption device on the upper surface of the stack structure, wherein the two-dimensional electron gas consumption device is used for providing holesfor two-dimensional electron gas so as to consume the two-dimensional electron gas; and forming a grid electrode on the upper surface of the two-dimensional electron gas consumption device. 一种增强型氮化镓基高电子迁移率晶体管及其制备方法，所述增强型氮化镓基高电子迁移率晶体管的制备方法，包括以下步骤：提供衬底，所述衬底上表面设置有堆叠结构，所述堆叠结构包括沟道层和势垒层；在所述堆叠结构的上表面形成源极、漏极和二维电子气消耗装置，所述二维电子气消耗装置用于为二维电子气提供空穴，以消耗所述二维电子气；在所述二维电子气消耗装置上表面形成所述栅极。