GaN-based high-electron-mobility transistor and preparation method thereof

The invention relates to a GaN-based high-electron-mobility transistor and a preparation method thereof. The preparation method comprises the following steps of: providing a substrate, which is provided with a stack structure on the surface, wherein the stack structure comprises a channel layer and a barrier layer; forming a guiding device on the upper surface of the stack structure, wherein the guiding device is used for expanding a channel electric field region of the GaN-based high-electron-mobility field effect transistor; and forming a grid electrode, a source electrode and a drain electrode on the upper surface of the stack structure, wherein the side wall of the grid electrode is in contact with the guiding device. 一种氮化镓基高电子迁移率晶体管及其制备方法，其中所述制备方法包括以下步骤：提供衬底，所述衬底表面设置有堆叠结构，所述堆叠结构包括沟道层和势垒层；在所述堆叠结构的上表面形成导流装置，所述导流装置用于扩展所述氮化镓基高电子迁移率场效应管的沟道电场区域；在所述堆叠结构的上表面形成所述栅极、源极和漏极，且所述栅极的侧壁与所述导流装置接触。