SiC epitaxial wafer, semiconductor device, and power converter

The invention relates to a SiC epitaxial wafer, a semiconductor device, and a power converter, and aims to provide a SiC epitaxial wafer with a high yield of devices. The SiC epitaxial wafer (11) includes a SiC substrate (1) and a SiC epitaxial layer (2) disposed on the SiC substrate (1). The SiC epitaxial layer (2) includes a high carrier concentration layer (2B1) and two low carrier concentration layers (2A) having lower carrier concentration than the high carrier concentration layer (2B1), and being in contact with a top surface and a bottom surface of the high carrier concentration layer (2B1) to sandwich the high carrier concentration layer (2B1). A difference in carrier concentration between the high carrier concentration layer (2B1) and the low carrier concentration layers (2A) is 5*10 /cm3 or more and 2*10 /cm3 or less. 本发明涉及SiC外延晶片、半导体装置、电力转换装置。本发明的目的在于提供器件的成品率充分高的SiC外延晶片。SiC外延晶片(11)具有SiC衬底(1)、以及形成于SiC衬底(1)之上的SiC外延层(2)，SiC外延层(2)具有：高载流子浓度层(2B1)；以及两层低载流子浓度层(2A)，它们与高载流子浓度层(2B1)相比载流子浓度低，与高载流子浓度层(2B1)的上表面