Silicon carbide Schottky diode

The invention relates to a silicon carbide Schottky diode, which comprises an active region and a terminal region at the periphery of the active region, wherein the active region comprises a doped region and a Schottky region which is not provided with the doped region, the conductivity type of the doped region is opposite to the conductivity type of the substrate of the active region, the activeregion is divided into an active region center region and an active region edge region at the periphery of the active region center region, the S value of the active region edge region is greater thanthe S value of the active region center region, the S value is the ratio of the area of the Schottky region to the area of the doped region, and the area of the active region edge region accounts for40%-80% of the total area of the source region. By arranging the doped region in the active region center region densely, the problem of electron mobility is improved, and hotspot failure is well avoided. 本发明涉及一种碳化硅肖特基二极管。包括有源