Semiconductor device and manufacturing method thereof

The embodiment of the invention provides a semiconductor device and a manufacturing method thereof. A dielectric layer can be formed on a substrate; a first stack layer and a second stack layer are formed in the dielectric layer, wherein the materials of the first stack layer and the second stack layer are not completely the same; the first stack layer is formed in a first through hole longitudinally penetrating through the dielectric layer and includes a first doped material layer, a first channel layer, and a second doped material layer; the second stack layer is formed in a second through hole longitudinally penetrating through the dielectric layer and includes a third doped material layer, a second channel layer, and a fourth doped material layer; and then a first device may be formedin the first stack layer, and a second device may be formed in the second stack layer. Therefore, a longitudinal channel layer exists between the source and the drain, the length of the channel layeris related to the thicknes