Carbon nanotube/gallium arsenide heterojunction wide-spectrum ultrathin solar cell and construction method thereof
The invention discloses a carbon nanotube/gallium arsenide heterojunction wide-spectrum ultrathin solar cell and a construction method thereof, and belongs to the technical field of semiconductor photoelectric devices. The carbon nanotube/gallium arsenide heterojunction wide-spectrum ultrathin solar...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a carbon nanotube/gallium arsenide heterojunction wide-spectrum ultrathin solar cell and a construction method thereof, and belongs to the technical field of semiconductor photoelectric devices. The carbon nanotube/gallium arsenide heterojunction wide-spectrum ultrathin solar cell comprises a lower electrode, an N-type gallium arsenide substrate, an insulating layer which is located on the gallium arsenide substrate and is provided with a window, a carbon nanotube film which is located in the window of the insulating layer and makes direct contact with gallium arsenide,and a graphical upper electrode which is arranged on the carbon nanotube film on the surface of the insulating layer. Compared with the prior art, the solar cell has the advantages that the efficientabsorption and conversion characteristics of the carbon nanotubes and gallium arsenide on photons can be utilized at the same time, and rapid separation and transportation are realized through a formed heterojunction interfac |
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