SEMICONDUCTOR DEVICE

Embodiments provide a semiconductor device having a holding voltage of two values. A semiconductor device according to an embodiment is provided with a semiconductor layer having a first surface and asecond surface, the semiconductor layer has a first semiconductor region of a first conductive type, a second semiconductor region of the second conductive type provided between the first semiconductor region and the first surface; a third semiconductor region of the first conductive type provided between the second semiconductor region and the first surface and having a lower impurity concentration of the first conductive type than the first semiconductor region; a fourth semiconductor region of the second conductive type provided between the third semiconductor region and the first surfaceand having a higher impurity concentration of the second conductive type than the second semiconductor region; a first electrode provided on the first surface side of the semiconductor layer and electrically connected to the t