Semiconductor device and manufacturing method thereof

The invention discloses a semiconductor device and a manufacturing method thereof, relates to the technical field of semiconductors, and aims to solve the problem that cracks are generated in the surface of a porous film in the planarization process of a planarization material layer. The semiconductor device comprises: a substrate having a stepped surface including a high step surface and a low step surface; a material layer formed on the low step surface, wherein the material layer has an inclined surface on the low step surface; and a planarization layer covering the low step surface, the material layer, and the high step surface. The manufacturing method of the semiconductor device is used for manufacturing the semiconductor device. 本发明公开一种半导体器件及其制作方法，涉及半导体技术领域，以解决在对平坦化材料层进行平坦化的过程中，在多孔膜质的表面产生裂纹的问题。该半导体器件包括：衬底，衬底具有台阶状表面，台阶状表面包括高台阶面和低台阶面；材料层，材料层形成在低台阶面上；材料层位于低台阶面具有斜面；以及，覆盖低台阶面、材料层和高台阶面的平坦化层。所述半导体器件的制作方法用于制作半导体器件。