Preparation method of vertical carbon nano tube array for high-absorption-ratio material

The invention relates to a preparation method of a vertical carbon nano tube array. The method comprises the following steps that (1) a buffer layer and a catalyst layer are plated on the surface of asubstrate in sequence, wherein the buffer layer is an Al2O3 film layer, and the catalyst layer is an iron film layer or a cobalt film layer or a nickel film layer; (2) the substrate plated with the buffer layer and the catalyst layer is placed in a chemical vapor deposition reaction cavity, a carbon source is introduced into the cavity, and a reaction is performed at 650-900 DEG C until the the mixture is separated out on the surface of the catalyst layer to form the vertical carbon nano tube array. The preparation method of the vertical carbon nano tube array is low in process difficulty, the growing demand of the vertical carbon nano tube array can be met, and more than ten microns VACNTs is designed to achieve the ideal ultra-black high-absorption effect. 本发明涉及一种垂直碳纳米管阵列的制备方法，包括以下步骤：(1)于基体表面依次镀上缓冲层和催化剂层，所述缓冲层为