Preparation method of single crystal garnet film with high laser-induced damage threshold value

The invention discloses a preparation method of a single crystal garnet film with a high laser-induced damage threshold value. The preparation method comprises the following steps: 1) weighing raw materials consisting of, in percentage by mass, 91.736% if Bi2O3, 1.888% of Lu O , 5.8590% of Fe O , 0....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG YUANJING, ZHANG HUAIWU, QI ZHENFENG, YANG XUE, ZHANG DING, YANG QINGHUI, LI SUFAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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