Preparation method of single crystal garnet film with high laser-induced damage threshold value
The invention discloses a preparation method of a single crystal garnet film with a high laser-induced damage threshold value. The preparation method comprises the following steps: 1) weighing raw materials consisting of, in percentage by mass, 91.736% if Bi2O3, 1.888% of Lu O , 5.8590% of Fe O , 0....
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a preparation method of a single crystal garnet film with a high laser-induced damage threshold value. The preparation method comprises the following steps: 1) weighing raw materials consisting of, in percentage by mass, 91.736% if Bi2O3, 1.888% of Lu O , 5.8590% of Fe O , 0.021% of CaO, 0.048%-0.148% of V O and 0.348%-0.448% of B O , and mixing and meltingthe materials to obtain a melt; 2) cleaning a substrate; and 3) growing a film by using a liquid phase epitaxy method. According to the preparation method of the (LuBi)Fe O single crystal garnet film with the high laser-induced damage threshold value, vanadium oxide and boron oxide are added into the melt, so the viscosity of the melt is effectively improved, the surface quality of the film is improved, and then the laser-induced damage threshold value of the film is increased.
一种高激光诱导损伤阈值单晶石榴石薄膜的制备方法,包括:1)称取原料:BiO的质量百分含量为91.736%,LuO的质量百分含量为1.888%,FeO的质量百分含量为5.8590%,CaO的质量百分含量为0.021%,VO的质量百分含量为0.048%~0.148%,BO的质量百分含量为0.348% |
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