Hafnium oxide film deposition method

The invention provides a hafnium oxide film deposition method. The hafnium oxide film deposition method includes a heating step, a magnetron sputtering step, and a cooling step; the heating step is toheat a wafer to remove impurities on the surface of the wafer; in the magnetron sputtering step, a hafnium oxide film is deposited and formed on the wafer by using a pulsed direct-current power supply with a magnetron sputtering method; and in the cooling step, the wafer deposited with the hafnium oxide film is cooled. By applying the hafnium oxide film deposition method, the hafnium oxide film is deposited by using the pulsed direct-current power supply with the magnetron sputtering method, the wafer is heated before magnetron sputtering, and the hafnium oxide film is cooled after magnetronsputtering, so that oxygen molecules and hafnium atoms or hafnium ions can fully react without introducing impurities, which ensures the purity of the hafnium oxide film; therefore, the compactness and uniformity of the hafniu