DFB laser epitaxial structure and growth method thereof

A DFB laser epitaxial structure comprises an Inp substrate. An InP epitaxial layer deposited by MOCVD (Metal Organic Chemical Vapor Deposition), an AlInAsP insertion layer, alInAs epitaxial layer, anN-AlGaInAs waveguide layer, an AlGaInAs MQW, a P-AlGaInAs waveguide layer, a P-AlInAs limiting layer, a P-InP limiting layer, a corrosion barrier layer, an InP connection layer, a grating layer, an InGaAsP barrier transition layer and an InGaAs ohmic contact layer are sequentially arranged on the InP substrate. According to the DFB laser epitaxial structure designed by the scheme, a plurality of InGaAs thin layers matched with InP lattices are inserted into the InP epitaxial layer, on one hand, the influence of InP substrate dislocation on the MQW can be reduced, and on the other hand, impurities in the substrate can be prevented from being separated, so that the high-quality MQW is obtained, and the reliability of the laser is improved. 一种DFB激光器外延结构，包括InP基底，在所述InP基底依次采用MOCVD沉积的InP外延层、AlInAsP插入层、AlInAs外延层、N-AlGaIn