High-performance DFB laser structure and growth method thereof

A high-performance DFB laser structure comprises an Inp substrate. An N-InP buffer layer deposited by MOCVD (Metal Organic Chemical Vapor Deposition), an N-AlInAs epitaxial layer, an N-AlGaInAs waveguide layer, an AlGaInAs MQW, a P-AlGaInAs waveguide layer, a P-AlInAs limiting layer, a P-InP limiting layer, a grating layer, an InGaAsP barrier transition layer and an InGaAs ohmic contact layer aresequentially arranged on the InP substrate from bottom to top. A layer of N-InAlAsP is inserted between the N-InP buffer layer and the N-AlInAs epitaxial layer. According to the high-performance DFB laser structure designed in the scheme, the N-InAlAsP layer is inserted between the N-InP buffer layer and the N-InAlAs epitaxial layer, the high-quality MQW can be obtained, the reliability of the laser is improved, the conduction band energy order difference between the N-InP buffer layer and the N-InAlAs epitaxial layer can be smoothed, the resistance of the DFB laser is reduced, and the performance of the DFB laser is