Etching method

The embodiment of the invention discloses an etching method. The method comprises: providing a semiconductor structure to be etched; sequentially forming a first hard mask layer and a second hard masklayer on the semiconductor structure; forming a patterned photoresist layer on the second hard mask layer; etching the second hard mask layer by taking the patterned photoresist layer as a mask to form a first trench exposing the first hard mask layer; etching the first hard mask layer by taking the etched second hard mask layer as a mask to form a second groove communicated with the first groove; cleaning the inner wall of the second groove by using a cleaning solution, wherein the cleaning solution comprises a solution capable of removing a second hard mask layer material; and etching the semiconductor structure by taking the cleaned first hard mask layer as a mask. 本申请实施例公开一种刻蚀方法，所述方法包括：提供待刻蚀的半导体结构；在所述半导体结构上依次形成第一硬掩膜层和第二硬掩膜层；在所述第二硬掩膜层上形成图案化的光刻胶层；以所述图案化的光刻胶层为掩膜，刻蚀第二硬掩膜层，形成暴露所述第一硬掩膜层的第一沟槽；以刻蚀后的第二硬掩膜层为掩膜，刻蚀所述第一硬掩