Adjustable NAND WRITE performance

The application relates to adjustable NAND WRITE performance. Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell block. The memory device can then writedata for the accelerated write request to the target block using a single-level cell encoding. 本申请涉及可调NAND写入性能。本文描述了用于可调存储器设备写性能的设备和技术。可以在存储器设备处从存储器设备的控制器接收加速写入请求。所述存储器设备可以识别用于外部写入的目标块作为多级单元块打开。然后，所述存储器设备可以使用单级单元编码将所述加速写入请求的数据写入所述目标块。