METAL-SILICIDE-NITRIDATION FOR STRESS REDUCTION

A pellicle for a lithographic apparatus, wherein the pellicle comprises nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed i...

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Bibliographische Detailangaben
Hauptverfasser:	NOTENBOOM ARNOUD W, NASALEVICH MAXIM A, PETER MARIA, VAN DER WOORD TIES W, VLES DAVID F, KLOOTWIJK JOHAN H, SJMAENOK LEONID A, GIESBERS ADRIANUS J M, KURGANOVA EVGENIA, VAN ZWOL PIETER-JAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A pellicle for a lithographic apparatus, wherein the pellicle comprises nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus comprising at least one compensating layer selected and configured to counteract changes in the transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle. 用于光刻设备的表膜及其制造方法，其中，该表膜包括氮化金属硅化物或氮化硅。还公开了氮化金属硅化物或氮化硅表膜在光刻设备中的用途。还公开了用于光刻设备的表膜，该表膜包括至少一个补偿层，该补偿层被选择并配置为抵消在暴露于EUV辐射时该表膜的透射率的变化；以及控制该表膜的透射率的方法和设计表膜的方法。