Heavy ion beam uniformity test system and method

The invention relates to a heavy ion beam uniformity test system and method. The system comprises an SRAM test chip, a single event effect test system and a heavy ion irradiation terminal. The SRAM test chip is used as a carrier for researching a single event upset effect of a heavy ion beam on a device and is arranged in a single event effect test system. The heavy ion irradiation terminal is arranged on one side of the SRAM test chip, and a beam current window of the heavy ion irradiation terminal is aligned with the SRAM test chip and is used for providing heavy ions with a preset fluence rate for the SRAM test chip. Real-time communication is established between the single event effect testing system and the SRAM testing chip, and the single event effect testing system is used for reading the situation that the single event upset effect occurs on the SRAM testing chip after heavy ion irradiation in real time and obtaining the uniformity of heavy ions output by the heavy ion irradiation terminal according