DEGRADATION SIGNALING FOR A MEMORY DEVICE

The invention relates to degraded signaling for memory devices. In one example, a method in accordance with the described techniques may include monitoring, at a memory device, an operating characteristic of the memory device. For example, the threshold voltage of one or more transistors within the memory device may be monitored. The memory device may identify a degradation of the memory device based at least in part on the monitored operational characteristic. Based on identifying the degradation, the memory device may signal, to a host device, an indication of the degradation of the memory device. 本申请涉及针对存储器装置的降级传信。在一个实例中，根据所描述技术的方法可包含在存储器装置处监视所述存储器装置的操作特性。举例来说，可监视所述存储器装置内的一或多个晶体管的阈值电压。所述存储器装置可至少部分地基于所监视的操作特性识别所述存储器装置的降级。基于识别所述降级，所述存储器装置可向主机装置传信所述存储器装置的所述降级的指示。