Gold plating solution for semiconductor chip, gold plating method and nickel-gold plating method

The invention provides a gold plating solution for a semiconductor chip, a gold plating method and a nickel-gold plating method. The gold plating solution comprises 4-10 g/L of water-soluble gold salt, 12-20 g/L of pH buffer agent, 4-8 g/L of complexing agent, 30-45 g/L of masking agent and water. T...

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Bibliographische Detailangaben
Hauptverfasser: XU CHANGPO, WANG XIAOPENG, YANG YUCONG, WEI WENBO, LIANG XIAOFENG, GAO YUNXUE, LI YAZHE, CHEN CHENG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a gold plating solution for a semiconductor chip, a gold plating method and a nickel-gold plating method. The gold plating solution comprises 4-10 g/L of water-soluble gold salt, 12-20 g/L of pH buffer agent, 4-8 g/L of complexing agent, 30-45 g/L of masking agent and water. The gold plating method comprises the step of performing gold plating on a semiconductor chip by using the gold plating solution. The nickel-gold plating method comprises the steps of semiconductor chip surface pretreatment; nickel plating; gold plating by using the gold plating method of the semiconductor chip; and drying. The gold plating solution is stable, the gold plating method and the nickel-gold plating method are simple to operate, the gold plating process is uniform in speed, the bonding force of a gold layer is strong, and the thickness of a gold plating layer of the chip is uniform. 本发明提供一种用于半导体芯片的镀金液、镀金方法及镀镍金方法,镀金液包括4-10g/L的水溶性金盐、12-20g/L的pH缓冲剂、4-8g/L的络合剂、30-45g/L的掩蔽剂和水,镀金方法包括使用上述镀金液对半导体芯片进行镀金,镀镍金的方法包括半