PLASMA CHEMICAL PROCESSING OF WAFER DIES

A method of processing wafer dies at least partially separated by cut-lines formed in a surface of the wafer, comprises generating a plasma, for example using an RF source, and localising the reactionof the plasma with the wafer surface at vicinities of the cut-lines so as to etch the wafer in the vicinities of the cut-lines. Advantageously, the wafer may be laser-cut. 一种处理至少部分地由形成在晶圆的表面中的切割线分离的晶圆芯片的方法，包括例如使用RF源生成等离子体，以及将所述等离子体与所述晶圆表面的反应定位在所述切割线附近，从而蚀刻所述切割线附近的晶圆。有利地，可以用激光切割晶圆。