CMP APPARATUS AND METHOD OF PERFORMING CERIA-BASED CMP PROCESS

The present disclosure is directed to a method of performing a ceria-based CMP (Chemical Mechanical Polishing) process. In a first action, a slurry containing ceria particles is provided onto a polishing pad. In a second action, an oxide layer of a wafer is polished on the polishing pad by the slurry. In a third action, a cooling water having a temperature within a range of 0 DEG C to 5 DEG C is provided onto the polishing pad. In a fourth action, the wafer is polished on the polishing pad by the cooling water to remove the ceria particles from the oxide layer of the wafer. 本公开提供了一种执行氧化铈基化学机械研磨(Chemical Mechanical Polishing，简称CMP)过程的方法。方法包括步骤S401至S404。在步骤S401中，将包含氧化铈颗粒的浆料提供至研磨垫上。在步骤S402中，通过浆料在研磨垫上研磨晶圆的氧化物层。在步骤S403中，将温度在0℃至5℃范围内的冷却水提供至研磨垫上。在步骤S404中，通过冷却水在研磨垫上研磨晶圆以从晶圆的氧化物层上去除氧化铈颗粒。