Resistive random access memory and manufacturing method thereof

The invention provides a resistive random access memory and a manufacturing method of the resistive random access memory. The resistive random access memory comprises a lower electrode, a lower intercalation layer, a resistive layer, an upper intercalation layer and an upper electrode, the upper intercalation layer is made of metal titanium, because the metal titanium (the upper intercalation layer) has high standard Gibbs free energy and stronger oxygen uptake capability, oxygen ions can be obtained, and the concentration of oxygen vacancies in the resistive random access layer is increased such that the generation of oxygen vacancy conductive filaments is facilitated, and the consistency of the resistive random access memory is improved. Furthermore, the lower intercalation layer is madeof tantalum nitride, the upper intercalation layer and the lower intercalation layer can play a role of a series resistor, and the resistive random access memory can have a better resistive random access characteristic under