Schottky diode with high-phosphorus-doped N-type cut-off ring structure and preparation method

A Schottky diode with a high-phosphorus-doped N-type cut-off ring structure is characterized in that an N-type semiconductor is used as a substrate, an N-epitaxial layer is formed on the substrate, ananode is arranged on the N-epitaxial layer, and a blocking layer is made of molybdenum or aluminum and other materials. The diode is characterized in that phosphorus ions are injected into a Schottkydiode scribing channel. The cut-off ring is designed inside or outside the scribing channel, and the width of the cut-off ring is larger than that of the original scribing channel. Phosphorus ion implantation is arranged after the cut-off ring is corroded, at the moment, except that the cut-off ring is opened, other parts of the surface are all covered with photoresist, and the phosphorus ion implantation reaches the maximum concentration on the surface of the semiconductor. 一种高磷掺杂N型截止环结构的肖特基二极管，以N型半导体为基片，基片上形成N-外延层，N-外延层上为阳极使用钼或铝等材料制成阻档层；其特征是，在肖特基二极管划片道注入了磷离子。截止环设计在划片道内或外，截止环宽度应大于原有的划片道宽度。在截止环腐蚀完成后安排磷离子注入，这时表面除了截止环打开