METHOD FOR ADAPTING LIGHT EXTRACTION EFFICIENCY OF LIGHT EMITTING DIODE

The invention relates to a method of adapting light extraction LEE from at least one light emitting diode (10) with surface area S and perimeter P, the method being characterised in that it comprisesa step to encapsulate the light emitting diode with an encapsulation layer (12) with a refraction ind...

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Hauptverfasser: DAAMI ANIS, CONSONNI MARIANNE
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to a method of adapting light extraction LEE from at least one light emitting diode (10) with surface area S and perimeter P, the method being characterised in that it comprisesa step to encapsulate the light emitting diode with an encapsulation layer (12) with a refraction index N, the refraction index N being determined based on a model taking account of an internal quantum efficiency IQE of the light emitting diode, and such that extraction of light resulting from use of the encapsulation layer is such that the light emitting diode can achieve a predetermined externalquantum efficiency EQEK. 本发明涉及一种调整发光二极管的光提取效率的方法,该发光二极管具有表面积S和周长P,该方法的特征在于包括使用具有折射率N的封装层(12)来封装发光二极管的步骤;基于考虑发光二极管的内量子效率IQE的模型确定折射率N;并且利用封装层实现的光提取使得发光二极管能够实现预定的外量子效率EQE。