BIPOLAR TRANSISTOR WITH POLYSILICON EMITTER AND METHOD OF MANUFACTURING

BIPOLAR TRANSISTOR WITH POLYSILICON EMITTER AND METHOD OF MANUFACTURING

The present invention relates to a bipolar transistor semiconductor device comprising: a substrate layer (not shown); a collector epitaxial layer supported by the substrate layer; a base region supported by a portion of the collector epitaxial layer; and an emitter region supported by a portion of t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BERGLUND STEFAN, HOLLAND STEFFEN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention relates to a bipolar transistor semiconductor device comprising: a substrate layer (not shown); a collector epitaxial layer supported by the substrate layer; a base region supported by a portion of the collector epitaxial layer; and an emitter region supported by a portion of the base region, wherein the emitter region comprises a polysilicon material. 本发明涉及一种双极晶体管半导体装置，包括：衬底层；由衬底层支撑的集电极外延层；由集电极外延层的一部分支撑的基极区域；以及由基极区域的一部分支撑的发射极区域，其中，发射极区域包括多晶硅材料。