METHOD FOR CHARGING HTS SHIM DEVICE AND MAGNETIC ARRANGEMENT

A method for charging an HTS shim device in a cryostat having a room temperature bore using a charging device. A shim switch temporarily interrupts the superconducting state in a section of an HTS shim conductor path. The charging device includes a primary circuit with a normal-conducting charging c...

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Hauptverfasser: GUENTER KENNETH J, SCHAUWECKER ROBERT
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method for charging an HTS shim device in a cryostat having a room temperature bore using a charging device. A shim switch temporarily interrupts the superconducting state in a section of an HTS shim conductor path. The charging device includes a primary circuit with a normal-conducting charging coil and the conductor path forms a secondary circuit. A current change in the secondary circuit results from a change in magnetic flux generated by the charging coil through the secondary circuit. In a first phase the shim switch is opened to interrupt the superconducting state in a section of the conductor path, the charging coil is positioned in the bore, and the current in the primary circuit is changed; in a second phase, the conductor path is superconductingly closed; in a third phase, thecurrent in the primary circuit is changed and/or the charging coil is removed from the bore. 本发明涉及一种用于利用充电装置(1)给设置在带有室温孔(4)的低温恒温器(3)中的超导电磁线圈的HTS匀场装置(2)充电的方法,所述HTS匀场装置(2)包括至少一个超导闭合的HTS匀场导体线路(C)和用于在HTS匀场导体线路(C)的一个部段中暂时中断超导状态的匀场