Preparation method of copper-indium-gallium-selenium absorption layer

The invention discloses a preparation method of a copper-indium-gallium-selenium absorption layer, and the method specifically comprises the following steps: preparing a copper-indium-gallium prefabricated film on a back electrode molybdenum layer, and enabling the atomic proportions of the elements...

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Hauptverfasser:	LI XINLIAN, CHEN TAO, YE YAKUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	LI XINLIAN CHEN TAO YE YAKUAN
description	The invention discloses a preparation method of a copper-indium-gallium-selenium absorption layer, and the method specifically comprises the following steps: preparing a copper-indium-gallium prefabricated film on a back electrode molybdenum layer, and enabling the atomic proportions of the elements of the copper-indium-gallium prefabricated film to meet the conditions that 0.8 < = Cu/(In + Ga)
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According to the</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200612&DB=EPODOC&CC=CN&NR=111276563A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200612&DB=EPODOC&CC=CN&NR=111276563A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI XINLIAN</creatorcontrib><creatorcontrib>CHEN TAO</creatorcontrib><creatorcontrib>YE YAKUAN</creatorcontrib><title>Preparation method of copper-indium-gallium-selenium absorption layer</title><description>The invention discloses a preparation method of a copper-indium-gallium-selenium absorption layer, and the method specifically comprises the following steps: preparing a copper-indium-gallium prefabricated film on a back electrode molybdenum layer, and enabling the atomic proportions of the elements of the copper-indium-gallium prefabricated film to meet the conditions that 0.8 < = Cu/(In + Ga) <= 0.96, 0.25 < = Ga/(In + Ga) < = 0.35; carrying out selenylation reaction on the copper-indium-gallium prefabricated film in two stages, whereinin the first stage, reaction is carried out for a firstpreset duration in a selenium atmosphere with a first carrier gas flow value; and in the second stage, a reaction is carried out for a second preset duration in a selenium atmosphere with a second carrier gas flow value; andfinally, obtainingthe copper indium gallium selenium absorption layer containing the molybdenum selenide layer, whereinthe thickness of the molybdenum selenide layer is 20 nmto 400 nm. 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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Preparation method of copper-indium-gallium-selenium absorption layer
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