Preparation method of copper-indium-gallium-selenium absorption layer
The invention discloses a preparation method of a copper-indium-gallium-selenium absorption layer, and the method specifically comprises the following steps: preparing a copper-indium-gallium prefabricated film on a back electrode molybdenum layer, and enabling the atomic proportions of the elements...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention discloses a preparation method of a copper-indium-gallium-selenium absorption layer, and the method specifically comprises the following steps: preparing a copper-indium-gallium prefabricated film on a back electrode molybdenum layer, and enabling the atomic proportions of the elements of the copper-indium-gallium prefabricated film to meet the conditions that 0.8 < = Cu/(In + Ga) |
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