Method for forming semiconductor device

A method for forming a semiconductor device includes depositing a hard mask layer on a metal layer, depositing a first patterned layer on the hard mask layer, forming a first set of sidewall spacers on sidewalls of features of the first patterned layer, forming a second set of sidewall spacers on sidewalls of the first set of sidewall spacers, removing the first set of sidewall spacers, and performing a reactive ion etching process to pattern portions of the metal layer exposed through the first patterned layer and the second set of sidewall spacers. 一种半导体装置的形成方法包括沉积硬掩模层于金属层之上；沉积第一图案化层于硬掩模层之上；形成第一组侧壁间隔物于第一图案化层的部件的侧壁上；形成第二组侧壁间隔物于第一组侧壁间隔物的侧壁上；移除第一组侧壁间隔物；以及进行反应离子蚀刻工艺以图案化通过第一图案化层及第二组侧壁间隔物露出的金属层的部分。