Power Semiconductor Transistor With Improved Gate Charge

A power semiconductor transistor with improved gate charge is provided. The transistor includes: a substrate; an insulating layer on the substrate; and a gate electrode layer on the insulating layer;wherein the gate electrode layer includes one or more openings through the gate electrode layer to a top surface of the insulating layer.. 提供了一种具有改进的栅极电荷的功率半导体晶体管。该晶体管包括：衬底；在所述衬底上的绝缘层；以及在所述绝缘层上的栅电极层；其中，所述栅电极层包括穿过所述栅电极层到所述绝缘层的顶表面的一个或更多个开口。