Epitaxial layer material stripping method based on 3D laminated mask substrate

The invention discloses an epitaxial layer material stripping method based on a 3D laminated mask substrate, is used for epitaxial growth and stripping of III-V group compound semiconductor materialssuch as GaN, and belongs to the technical field of photoelectrons. The substrate structure comprises a substrate, wherein a bottom mask layer, a middle layer and a top mask layer are sequentially arranged on the substrate; the window of the bottom mask layer and the window of the top mask layer are mutually staggered. The invention also provides a preparation method of the substrate structure andan epitaxial layer stripping method based on the substrate structure. Compared with the prior art, the invention provides a more optimized peelable method, the peeling success rate is improved, the peeling time is shortened, and the peelable method has higher use value. 本发明公开了一种基于3D叠层掩模衬底的外延材料剥离方法，用于GaN等III-V族化合物半导体材料的外延生长及剥离，属于光电子技术领域。本衬底结构包括衬底，衬底上依次设有底层掩膜层、中间层、顶层掩膜层；其中底层掩膜层的窗口与顶层掩膜层的窗口相互错开。本发明同时提供了该衬底结构的制备方法以及基于该结构的外延层剥离