Single ring design for high yield, substrate extreme edge defect reduction in ICP plasma processing chamber

The invention relates to single ring design for high yield, substrate extreme edge defect reduction in ICP plasma processing chamber. Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and...

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Bibliographische Detailangaben
Hauptverfasser:	LANE ADAM, DAO HUUTRI, NG SIU TANG, WILLWERTH MICHAEL D, C LI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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