Single ring design for high yield, substrate extreme edge defect reduction in ICP plasma processing chamber

The invention relates to single ring design for high yield, substrate extreme edge defect reduction in ICP plasma processing chamber. Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface. The body has a bottom surface with a slot formed therein and a top surface with an outer end, adjacent to the outer surface, and an inner end adjacent to a slope extending, towards the centerline, down to a step on the inner surface. The body has a lip,disposed on the inner surface extending out from a vertical face below the step toward the centerline of the body, and is configured to support a substrate thereon. The body is sized such that a gap of less than about 2mm is formed on the lip between the substrate and the vertical face of the step. 本发明涉及一种在ICP等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计。本新型的实施例提供了单环，所述单环包括具有内部表面的圆环状的主体，所述内部表面最接近所述主体的中心线附近；所述主体亦包括相对于所述内部表面的外部表面。所述主体具有底表