Method of operating a controller which controls nonvolatile memory device and memory device

The present invention discloses a method of operating a controller which controls a nonvolatile memory device and a memory device. The method of operating a controller which controls a nonvolatile memory device includes enabling a command latch enable signal, an address latch enable signal, and a write enable signal and transmitting multiple data signals including a command and an address to the nonvolatile memory device in synchronization with the enabled write enable signal. A number of DQ lines through which the plurality of data signals are transmitted is greater than a number of bits of each of the data signals. The method also include disabling the command latch enable signal after the command is transmitted, and disabling the address latch enable signal and the write enable signal after the address is transmitted. 公开一种操作控制非易失性存储器装置的控制器的方法及存储装置。所述方法包括：启用命令锁存使能信号、地址锁存使能信号和写入使能信号；将包括命令和地址的多个数据信号与启用的写入使能信号同步地发送到非易失性存储器装置。通过其发送所述多个数据信号的DQ线的数量大于所述多个数据信号中的每个数据信号的位的数量。所述方法还包括：在发送命令之后，禁用命令锁存使能信号；以及在发送地址之后，禁用地址锁