Vacuumizing method for preventing dust explosion in phosphorus-doped monocrystalline silicon production and phosphorus-doped monocrystalline silicon production method applying vacuumizing method
The invention discloses a vacuumizing method for preventing dust explosion in phosphorus-doped monocrystalline silicon production. A monocrystalline furnace for producing phosphorus-doped monocrystalline silicon comprises a main chamber and an auxiliary chamber which are communicated with each other...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a vacuumizing method for preventing dust explosion in phosphorus-doped monocrystalline silicon production. A monocrystalline furnace for producing phosphorus-doped monocrystalline silicon comprises a main chamber and an auxiliary chamber which are communicated with each other, and the auxiliary chamber is arranged above the main chamber; the vacuumizing method comprises thefollowing steps: S1, a main valve and a main pump are sequentially communicated to the main chamber through a first pipeline, and the main valve and the main pump are closed; S2, an auxiliary valve and an auxiliary pump are sequentially communicated to the auxiliary chamber through a second pipeline, and a quick charging valve is communicated to the main chamber or the auxiliary chamber through athird pipeline; and the auxiliary valve and the auxiliary pump are opened to extract air in the monocrystalline furnace, and the quick charging valve is controlled to introduce inert gas into the monocrystalline furnace. By m |
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