Ion implantation method and ion implantation system

The invention provides an ion implantation method and an ion implantation system. The ion implantation method comprises the following steps of providing a wafer, wherein a plurality of channel holes are formed in the wafer, the communication holes located in the center area of the wafer are perpendicular to the surface of the wafer, and the channel holes located in the edge area of the wafer incline by an angle smaller than 90 degrees relative to the direction perpendicular to the surface of the wafer; and enabling the wafer to perform arc reciprocating motion along a first direction, and carrying out ion implantation in the wafer along a second direction, wherein the first direction is perpendicular to the second direction. According to the ion implantation method provided by the invention, in the process of carrying out ion implantation along the second direction to enable the wafer to do arc-shaped reciprocating motion along the first direction vertical to the second direction, theions can be ensured to be