Composite dual-wavelength LED chip and manufacturing method thereof
The invention provides a composite dual-wavelength LED chip and a manufacturing method thereof. The composite dual-wavelength LED chip comprises a substrate, a first buffer layer, a first semiconductor layer, a first light-emitting layer, a second semiconductor layer, a second buffer layer, a third...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a composite dual-wavelength LED chip and a manufacturing method thereof. The composite dual-wavelength LED chip comprises a substrate, a first buffer layer, a first semiconductor layer, a first light-emitting layer, a second semiconductor layer, a second buffer layer, a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer which are sequentially arranged. The first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers. The two light-emitting layers and the four semiconductor layers are arranged, and a common electrode is not needed, so that the light-emitting layers can be independently controlled, and mixed light emitting can also be realized; a driving voltage difference does not exist, so that non-uniform emission brightness of two wavelengths is not caused.
本发明所提供的一种复合型双波长LED芯片及其制作方法,包括:依次设置的衬底,第 |
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