Preparation method of silicon wafer micro-nano turbid transparent composite suede and application thereof

The invention discloses a preparation method of a silicon wafer micro-nano turbid transparent composite suede. The method comprises the following steps: forming a micron-sized pitted surface layer onthe surface of a silicon wafer by sand blasting equipment; further manufacturing a nanoscale pitted surface layer on the surface of the micron-sized pitted surface layer, and finally forming a composite suede structure in which the nanoscale pitted surface layer is smooth and light-transmitting after complete turbidity removal and a low-reflection semitransparent turbidity layer is still reservedafter a micron-sized pitted surface layer etching process through an etching process. The technical process is simple, the depths of the micron-sized pitted surface layer and the nano pitted surface layer are stable and controllable, and the forming precision is high; according to the formed micro-nano turbid transparent composite structure, the light receiving area of the crystalline silicon of the solar cell is increased