High electron mobility transistor device and manufacturing method thereof
The invention discloses a high electron mobility transistor device and a manufacturing method thereof. The high electron mobility transistor device comprises a substrate, wherein a superlattice bufferlayer is arranged above the substrate, and comprises plural groups of alternating layers, each group...
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| creator | XIE QIFENG WANG DUANWEI SUN JIANREN |
| description | The invention discloses a high electron mobility transistor device and a manufacturing method thereof. The high electron mobility transistor device comprises a substrate, wherein a superlattice bufferlayer is arranged above the substrate, and comprises plural groups of alternating layers, each group of the alternating layers comprises at least one AlN layer and at least one AlxGa(1-x)N layer which are arranged in a staggered manner, x is greater than or equal to 0 and less than 1, a gradual change type buffer layer is arranged above the substrate, and comprises a plurality of AlyGa(1-y)N layers, y is greater than or equal to 0 and less than 1, and a channel layer is arranged above the gradual change type buffer layer. The efficiency and the yield of the high-electron-mobility transistor device can be improved while the productivity is improved.
一种高电子迁移率晶体管装置及其制造方法，高电子迁移率晶体管装置包含衬底；超晶格缓冲层设置于衬底上方，其中超晶格缓冲层包含多组交替层，每组交替层包含交错排列的至少一AlN层和至少一AlGaN层，其中0≤x |
| format | Patent |
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一种高电子迁移率晶体管装置及其制造方法，高电子迁移率晶体管装置包含衬底；超晶格缓冲层设置于衬底上方，其中超晶格缓冲层包含多组交替层，每组交替层包含交错排列的至少一AlN层和至少一AlGaN层，其中0≤x<1；渐变式缓冲层设置于衬底上方，其中渐变式缓冲层包含多个AlGaN层，其中0≤y<1；以及通道层设置于渐变式缓冲层上方。本发明能够</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200512&DB=EPODOC&CC=CN&NR=111146269A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200512&DB=EPODOC&CC=CN&NR=111146269A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XIE QIFENG</creatorcontrib><creatorcontrib>WANG DUANWEI</creatorcontrib><creatorcontrib>SUN JIANREN</creatorcontrib><title>High electron mobility transistor device and manufacturing method thereof</title><description>The invention discloses a high electron mobility transistor device and a manufacturing method thereof. The high electron mobility transistor device comprises a substrate, wherein a superlattice bufferlayer is arranged above the substrate, and comprises plural groups of alternating layers, each group of the alternating layers comprises at least one AlN layer and at least one AlxGa(1-x)N layer which are arranged in a staggered manner, x is greater than or equal to 0 and less than 1, a gradual change type buffer layer is arranged above the substrate, and comprises a plurality of AlyGa(1-y)N layers, y is greater than or equal to 0 and less than 1, and a channel layer is arranged above the gradual change type buffer layer. The efficiency and the yield of the high-electron-mobility transistor device can be improved while the productivity is improved.
一种高电子迁移率晶体管装置及其制造方法，高电子迁移率晶体管装置包含衬底；超晶格缓冲层设置于衬底上方，其中超晶格缓冲层包含多组交替层，每组交替层包含交错排列的至少一AlN层和至少一AlGaN层，其中0≤x<1；渐变式缓冲层设置于衬底上方，其中渐变式缓冲层包含多个AlGaN层，其中0≤y<1；以及通道层设置于渐变式缓冲层上方。本发明能够</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyj0OwjAMQOEsDAi4gzkAAz-qxFhVoLIwsVchcRpLiV0lLhK3h4ED8JZveUtz62mMgAmdFmHI8qRE-gYtlitVlQIeX-QQLHvIludgnc6FeISMGsWDRiwoYW0WwaaKm58rs71eHl2_w0kGrJN1yKhDd99_OzWH5twe_3k-LvE1UQ</recordid><startdate>20200512</startdate><enddate>20200512</enddate><creator>XIE QIFENG</creator><creator>WANG DUANWEI</creator><creator>SUN JIANREN</creator><scope>EVB</scope></search><sort><creationdate>20200512</creationdate><title>High electron mobility transistor device and manufacturing method thereof</title><author>XIE QIFENG ; WANG DUANWEI ; SUN JIANREN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111146269A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>XIE QIFENG</creatorcontrib><creatorcontrib>WANG DUANWEI</creatorcontrib><creatorcontrib>SUN JIANREN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XIE QIFENG</au><au>WANG DUANWEI</au><au>SUN JIANREN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High electron mobility transistor device and manufacturing method thereof</title><date>2020-05-12</date><risdate>2020</risdate><abstract>The invention discloses a high electron mobility transistor device and a manufacturing method thereof. The high electron mobility transistor device comprises a substrate, wherein a superlattice bufferlayer is arranged above the substrate, and comprises plural groups of alternating layers, each group of the alternating layers comprises at least one AlN layer and at least one AlxGa(1-x)N layer which are arranged in a staggered manner, x is greater than or equal to 0 and less than 1, a gradual change type buffer layer is arranged above the substrate, and comprises a plurality of AlyGa(1-y)N layers, y is greater than or equal to 0 and less than 1, and a channel layer is arranged above the gradual change type buffer layer. The efficiency and the yield of the high-electron-mobility transistor device can be improved while the productivity is improved.
一种高电子迁移率晶体管装置及其制造方法，高电子迁移率晶体管装置包含衬底；超晶格缓冲层设置于衬底上方，其中超晶格缓冲层包含多组交替层，每组交替层包含交错排列的至少一AlN层和至少一AlGaN层，其中0≤x<1；渐变式缓冲层设置于衬底上方，其中渐变式缓冲层包含多个AlGaN层，其中0≤y<1；以及通道层设置于渐变式缓冲层上方。本发明能够</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | High electron mobility transistor device and manufacturing method thereof |
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