High electron mobility transistor device and manufacturing method thereof

The invention discloses a high electron mobility transistor device and a manufacturing method thereof. The high electron mobility transistor device comprises a substrate, wherein a superlattice bufferlayer is arranged above the substrate, and comprises plural groups of alternating layers, each group of the alternating layers comprises at least one AlN layer and at least one AlxGa(1-x)N layer which are arranged in a staggered manner, x is greater than or equal to 0 and less than 1, a gradual change type buffer layer is arranged above the substrate, and comprises a plurality of AlyGa(1-y)N layers, y is greater than or equal to 0 and less than 1, and a channel layer is arranged above the gradual change type buffer layer. The efficiency and the yield of the high-electron-mobility transistor device can be improved while the productivity is improved. 一种高电子迁移率晶体管装置及其制造方法，高电子迁移率晶体管装置包含衬底；超晶格缓冲层设置于衬底上方，其中超晶格缓冲层包含多组交替层，每组交替层包含交错排列的至少一AlN层和至少一AlGaN层，其中0≤x