Semiconductor memory device

A semiconductor memory device includes a substrate, a first active pattern on the substrate, a gate electrode intersecting a channel region of the first active pattern, a first insulating layer covering the first active pattern and the gate electrode, a contact penetrating the first insulating layer so as to be electrically connected to a first source/drain region of the first active pattern, anda second active pattern on the first insulating layer. A channel region of the second active pattern vertically overlaps with the contact. 一种半导体存储器件包括：衬底；衬底上的第一有源图案；与第一有源图案的沟道区相交的栅电极；覆盖第一有源图案和栅电极的第一绝缘层；穿透第一绝缘层以便电连接到第一有源图案的第一源/漏区的接触部；以及第一绝缘层上的第二有源图案。第二有源图案的沟道区与接触部在竖直方向上重叠。