Microwave power amplifier chip carrier and preparation method thereof
The invention discloses a microwave power amplifier chip carrier and a preparation method thereof. The microwave power amplifier chip carrier comprises a high silicon aluminum alloy substrate, a chipcushion block and a film capacitor; the chip cushion block comprises a chip welding metal layer and a...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | DING LEI WANG LICHUN ZHOU YI REN WEIPENG LIU MIFENG |
| description | The invention discloses a microwave power amplifier chip carrier and a preparation method thereof. The microwave power amplifier chip carrier comprises a high silicon aluminum alloy substrate, a chipcushion block and a film capacitor; the chip cushion block comprises a chip welding metal layer and a carrier welding metal layer, and the film capacitor comprises a bonding layer, a dielectric layerand an electrode metal layer. The manufacturing method comprises the following steps: providing the high silicon aluminum alloy substrate with a polished surface, and sequentially forming the bondinglayer and the dielectric layer in a thin film capacitor region on the first surface of the substrate; forming the metal layer on the chip welding area on the first surface of the substrate and the surface of the thin-film capacitor dielectric layer; after a carrier welding metal layer is formed on the second surface of the substrate, performing scribing. According to the microwave power amplifierchip carrier and the manufac |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN111146155A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN111146155A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN111146155A3</originalsourceid><addsrcrecordid>eNrjZHD1zUwuyi9PLEtVKMgvTy1SSMwtyMlMywSykjMyCxSSE4uKQJzEvBSFgqLUgsSixJLM_DyF3NSSjPwUhZKM1KLU_DQeBta0xJziVF4ozc2g6OYa4uyhm1qQH59aXJCYnJqXWhLv7GcIBCZmhqamjsbEqAEAH-ozgw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Microwave power amplifier chip carrier and preparation method thereof</title><source>esp@cenet</source><creator>DING LEI ; WANG LICHUN ; ZHOU YI ; REN WEIPENG ; LIU MIFENG</creator><creatorcontrib>DING LEI ; WANG LICHUN ; ZHOU YI ; REN WEIPENG ; LIU MIFENG</creatorcontrib><description>The invention discloses a microwave power amplifier chip carrier and a preparation method thereof. The microwave power amplifier chip carrier comprises a high silicon aluminum alloy substrate, a chipcushion block and a film capacitor; the chip cushion block comprises a chip welding metal layer and a carrier welding metal layer, and the film capacitor comprises a bonding layer, a dielectric layerand an electrode metal layer. The manufacturing method comprises the following steps: providing the high silicon aluminum alloy substrate with a polished surface, and sequentially forming the bondinglayer and the dielectric layer in a thin film capacitor region on the first surface of the substrate; forming the metal layer on the chip welding area on the first surface of the substrate and the surface of the thin-film capacitor dielectric layer; after a carrier welding metal layer is formed on the second surface of the substrate, performing scribing. According to the microwave power amplifierchip carrier and the manufac</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200512&DB=EPODOC&CC=CN&NR=111146155A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200512&DB=EPODOC&CC=CN&NR=111146155A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DING LEI</creatorcontrib><creatorcontrib>WANG LICHUN</creatorcontrib><creatorcontrib>ZHOU YI</creatorcontrib><creatorcontrib>REN WEIPENG</creatorcontrib><creatorcontrib>LIU MIFENG</creatorcontrib><title>Microwave power amplifier chip carrier and preparation method thereof</title><description>The invention discloses a microwave power amplifier chip carrier and a preparation method thereof. The microwave power amplifier chip carrier comprises a high silicon aluminum alloy substrate, a chipcushion block and a film capacitor; the chip cushion block comprises a chip welding metal layer and a carrier welding metal layer, and the film capacitor comprises a bonding layer, a dielectric layerand an electrode metal layer. The manufacturing method comprises the following steps: providing the high silicon aluminum alloy substrate with a polished surface, and sequentially forming the bondinglayer and the dielectric layer in a thin film capacitor region on the first surface of the substrate; forming the metal layer on the chip welding area on the first surface of the substrate and the surface of the thin-film capacitor dielectric layer; after a carrier welding metal layer is formed on the second surface of the substrate, performing scribing. According to the microwave power amplifierchip carrier and the manufac</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD1zUwuyi9PLEtVKMgvTy1SSMwtyMlMywSykjMyCxSSE4uKQJzEvBSFgqLUgsSixJLM_DyF3NSSjPwUhZKM1KLU_DQeBta0xJziVF4ozc2g6OYa4uyhm1qQH59aXJCYnJqXWhLv7GcIBCZmhqamjsbEqAEAH-ozgw</recordid><startdate>20200512</startdate><enddate>20200512</enddate><creator>DING LEI</creator><creator>WANG LICHUN</creator><creator>ZHOU YI</creator><creator>REN WEIPENG</creator><creator>LIU MIFENG</creator><scope>EVB</scope></search><sort><creationdate>20200512</creationdate><title>Microwave power amplifier chip carrier and preparation method thereof</title><author>DING LEI ; WANG LICHUN ; ZHOU YI ; REN WEIPENG ; LIU MIFENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111146155A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DING LEI</creatorcontrib><creatorcontrib>WANG LICHUN</creatorcontrib><creatorcontrib>ZHOU YI</creatorcontrib><creatorcontrib>REN WEIPENG</creatorcontrib><creatorcontrib>LIU MIFENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DING LEI</au><au>WANG LICHUN</au><au>ZHOU YI</au><au>REN WEIPENG</au><au>LIU MIFENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Microwave power amplifier chip carrier and preparation method thereof</title><date>2020-05-12</date><risdate>2020</risdate><abstract>The invention discloses a microwave power amplifier chip carrier and a preparation method thereof. The microwave power amplifier chip carrier comprises a high silicon aluminum alloy substrate, a chipcushion block and a film capacitor; the chip cushion block comprises a chip welding metal layer and a carrier welding metal layer, and the film capacitor comprises a bonding layer, a dielectric layerand an electrode metal layer. The manufacturing method comprises the following steps: providing the high silicon aluminum alloy substrate with a polished surface, and sequentially forming the bondinglayer and the dielectric layer in a thin film capacitor region on the first surface of the substrate; forming the metal layer on the chip welding area on the first surface of the substrate and the surface of the thin-film capacitor dielectric layer; after a carrier welding metal layer is formed on the second surface of the substrate, performing scribing. According to the microwave power amplifierchip carrier and the manufac</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN111146155A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Microwave power amplifier chip carrier and preparation method thereof |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T04%3A55%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DING%20LEI&rft.date=2020-05-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN111146155A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |