Microwave power amplifier chip carrier and preparation method thereof

The invention discloses a microwave power amplifier chip carrier and a preparation method thereof. The microwave power amplifier chip carrier comprises a high silicon aluminum alloy substrate, a chipcushion block and a film capacitor; the chip cushion block comprises a chip welding metal layer and a carrier welding metal layer, and the film capacitor comprises a bonding layer, a dielectric layerand an electrode metal layer. The manufacturing method comprises the following steps: providing the high silicon aluminum alloy substrate with a polished surface, and sequentially forming the bondinglayer and the dielectric layer in a thin film capacitor region on the first surface of the substrate; forming the metal layer on the chip welding area on the first surface of the substrate and the surface of the thin-film capacitor dielectric layer; after a carrier welding metal layer is formed on the second surface of the substrate, performing scribing. According to the microwave power amplifierchip carrier and the manufac