Integrated series resistor flip LED chip and manufacturing method thereof
The invention discloses an integrated series resistor flip LED chip and a manufacturing method thereof. The integrated series resistor flip LED chip comprises a sapphire substrate, a gallium nitride epitaxial layer is arranged on the sapphire substrate, a first-layer metal electrode is arranged on t...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention discloses an integrated series resistor flip LED chip and a manufacturing method thereof. The integrated series resistor flip LED chip comprises a sapphire substrate, a gallium nitride epitaxial layer is arranged on the sapphire substrate, a first-layer metal electrode is arranged on the gallium nitride epitaxial layer, a first-layer insulating medium is arranged on the outer wall ofthe first-layer metal electrode, and a first window is formed in the first-layer insulating medium; a resistance layer is arranged on the outer side of the first-layer insulating medium, and the resistance layer is in electric contact connection with the first-layer metal electrode through the first window; a second insulating medium is arranged on the outer wall of the resistance layer, and a second window is formed in the second insulating medium; and a second metal electrode is arranged on the outer side of the second insulating medium and is in electric contact connection with the resistance layer through the sec |
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