GaN crystal growth device

The invention discloses a GaN crystal growth device. The GaN crystal growth device comprises a furnace body, a reaction kettle, an upper heating body, a lower heating body and a transmission mechanism, wherein the reaction kettle is arranged in the furnace body; the upper heating body is arranged ar...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LING DONGXIONG, WU XI, WANG HONGCHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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