GaN crystal growth device

The invention discloses a GaN crystal growth device. The GaN crystal growth device comprises a furnace body, a reaction kettle, an upper heating body, a lower heating body and a transmission mechanism, wherein the reaction kettle is arranged in the furnace body; the upper heating body is arranged around the upper part of the reaction kettle; the lower heating body is arranged around the lower partof the reaction kettle; a crucible is arranged in the reaction kettle; polycrystalline gallium nitride, a fluxing agent solution and single crystal gallium nitride seed crystals are sequentially contained in the crucible from bottom to top so as to allow a gallium nitride crystal to grow; and a transmission mechanism is connected with the reaction kettle and is used for driving the reaction kettle to rotate. The GaN crystal growth device solves the problem that high growth temperature of a fluxing agent method, strong corrosivity of a fluxing agent solution and poor fluidity of the fluxing agent solution are not bene