Semiconductor structure etching solution and method for fabricating semiconductor structure using the same etching solution

Embodiments of the invention relate to a semiconductor structure etching solution and a method for fabricating a semiconductor structure using the same etching solution. The present disclosure provides a semiconductor structure etching solution, including an etchant, an ionic strength enhancer having an ionic strength greater than 10-3 M in the semiconductor structure etching solution, and a solvent having a dielectric constant lower than a dielectric constant of water. 本发明一些实施例涉及制造半导体结构的蚀刻溶液与使用蚀刻溶液制造半导体结构的方法。本发明一些实施例提供一种半导体结构蚀刻溶液，其包含蚀刻剂、在所述半导体结构蚀刻溶液中具有大于10M的离子强度的离子强度增强剂、及具有低于水的介电常数的介电常数的溶剂。