Preparation of skutterudite thermoelectric device with high length-diameter ratio
The invention relates to a skutterudite thermoelectric device with a high length-diameter ratio and a preparation method. The device comprises type skutterudite galvanic couple arms and p type skutterudite galvanic couple arms; gaps between the couple arms are filled with a high-temperature-resistan...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a skutterudite thermoelectric device with a high length-diameter ratio and a preparation method. The device comprises type skutterudite galvanic couple arms and p type skutterudite galvanic couple arms; gaps between the couple arms are filled with a high-temperature-resistant inorganic adhesive; microelectrodes are arranged at the cold end and hot end of the thermoelectricdevice; and lead-out wires are arranged at the cold end. The preparation method comprises the following steps of: (1) cutting a skutterudite raw material for the first time; (2) gluing and assemblinga skutterudite sheet thermoelectric array; (3) cutting a single-row skutterudite array; (4) gluing and assembling a multiple-row skutterudite array; (5) cutting off a mold; (6) preparing a mask; (7)preparing microelectrodes; and (8) welding lead-out wires. According to the skutterudite thermoelectric device with the high length-diameter ratio, the ratio of the length of the galvanic couple armsto the cross section area of |
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