ELECTRIC DEVICE WAFER

A device wafer with functional device structures, comprises a semiconductor substrate (SU)as a carrier wafer, a piezoelectric layer (PL) arranged on the carrier wafer and functional device structures(DS) of a first and a second type realized by a structured metallization on top of the piezoelectric...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ROSLER ULRIKE, MEISTER VEIT
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS
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Beschreibung
Zusammenfassung:	A device wafer with functional device structures, comprises a semiconductor substrate (SU)as a carrier wafer, a piezoelectric layer (PL) arranged on the carrier wafer and functional device structures(DS) of a first and a second type realized by a structured metallization on top of the piezoelectric layer (PL). A space charge region is formed near the top surface of the carrier wafer to yield enhanced electrical isolation between functional device structures (DS) of first and second type. 一种具有功能性器件结构的器件晶片，包括：作为载体晶片的半导体衬底(SU)；压电层(PL)，布置在载体晶片上；以及第一类型和第二类型的功能性器件结构(DS)，通过压电层(PL)上的结构化的金属化部实现。空间电荷区域被形成在载体晶片的顶表面附近，以在第一类型和第二类型的功能性器件结构(DS)之间产生增强的电隔离。